Abstract
AbstractMagnetron sputter deposition of Ge2Sb2Te5 film is presented. Good thermal control of the wafer is found critical for maintaining process repeatability. In-situ wafer heating conditions have strong impact on as-deposited Ge2Sb2Te5 film properties such as resistivity, density, stress, composition, and microstructure. The effects of wafer bias and sputtering pressure are also discussed.
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