Ge[sub 2]Sb[sub 2]Te[sub 5] Charge Trapping Nanoislands with High-k Blocking Oxides for Charge Trap Memory

Abstract

Charge trap memory capacitors using (GST) nanoislands as charge storage media were fabricated. The GST nanoislands were prepared by plasma-enhanced cyclic chemical vapor deposition on a 6 nm thick tunneling layer. A 16 nm thick or 40 nm thick film was used as the blocking oxide (BO). A shift in the flatband voltage in the capacitance–voltage test was achieved when the GST nanoislands were interposed between the and BOs, highlighting the feasibility of memory applications. The charges were trapped at the interface between the GST and BOs. Stable charge retention up to was observed.