Amorphous Oxide Semiconductor Memory Using High-k Charge Trap Layer

Abstract

Amorphous oxide semiconductor memory devices with HfInZnOx as the channel layer and high k dielectric stacks as the charge storage medium were fabricated. HfO2 and Al2O3 and HfAlOx films were examined as the charge trap layers. The drain current - gate voltage transfer curves of the fabricated charge trap memories show a large hysteresis due to the electron trapping and de-trapping at the interfaces between the high-k charge storage layer and the SiO2. The device structure and operational scheme for the amorphous oxide semiconductor charge trap memories were suggested based on these properties.