Abstract
Effect of low-energy ion-beam irradiation during Ge on Si(100) growth on characteristics of Ge nanoislands array is studied. It is shown by STM that pulsed ion-beam action leads to an increase in Ge nanoislands density. The dependence of Ge nanoislands density upon ion energy is non-monotonous with maximum at 150 eV. RBS data indicate a perfect crystal structure of Ge nanoislands. By Raman spectroscopy the Ge content in SiGe quantum dots is estimated to be higher than 75%.
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