Abstract
The effect of Ge doping on the properties of AgInSe2 thin films has been investigated by the co-evaporation of AgInSe2 alloy chunks, Se and Ge on Corning 7059 glass substrates. Samples were nearly stoichiometric and contained very small amounts of Ge. They showed a highly [112]-oriented chalcopyrite structure, good optical transmittance spectra in the IR region (λ=1-2.6 µm) and an increase of n-type conductivity compared with the nondoped sample. Raman scattering suggested that the doped Ge atoms replaced some of the In atoms in the chalcopyrite structure. The Ge-doped sample grew uniformly from the beginning of film deposition.
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