Abstract
Recent developments in the Ge condensation technique for the fabrication of the SiGe on insulator (SGOI) structures, which are the basic templates for the strained channel MOSFET's, and the further extensions to the SGOI formation on (110) substrates and the Ge on insulator (GOI) formation are reviewed in this paper. The detail analyses of the phenomenon during the initial stage in the Ge condensation process, in which the fragments of the misfit dislocations, that are formed at the SiGe / SOI interface, rise up resulting the generation of the threading dislocations are quite important, and the controlling of the understood phenomenon by the modification of the condensation recipe brings the successful fabrication of the high quality SGOI substrates with low dislocation density.
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