Abstract
AbstractA graphene field‐effect transistor (GFET) based on chemical vapour deposited (CVD) Ge‐based graphene was reported and the low‐temperature electrical characteristics primarily investigated. The self‐alignment technique was used to fabricate a GFET to reduce parasitic effects and improve transconductance and cut‐off frequency. To further explore the electrical properties, the direct current and radio frequency characteristics of the GFET were studied over a temperature range from 4.2 to 300 K, considering the temperature‐dependent resistivity of intrinsic Ge. The direct current characteristic of the GFET for 110‐nm gate length, particularly the transconductance performance, exhibits a tiny variation of only 5% across this temperature range. However, the cut‐off frequency experiences a considerable increase, improving several tens of times when the temperature decreases to 4.2 K, with a maximum value of 3.49 GHz. This work illustrates a meaningful advancement in applying GFETs in the low‐temperature, high‐frequency domain.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
