Abstract
A new phase change material Ge2Sb1.5Bi0.5Te5 (GSBT) with good optothermal effect has been developed as an inorganic photoresist. Masks based on the material can be easily fabricated by home-built laser direct writing (LDW) equipment, and as a result mask patterns have been successfully transferred onto Si substrates by reactive ion etching techniques. Experimental results indicate that maximum etching selectivity of Si to GSBT reaches up to 524:1, which is comparable with the traditional organic photoresists, and the high ratio is also explained theoretically. Because of the merits of the inorganic photoresist, it might prove useful in silicon-based microelectronics
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