Abstract
A reactive ion etching (RIE) technique using a , , and mixture was applied to the fabrication of (P‐substrate partially inverted buried heterostructure laser diodes, which have been commercially produced for their superior characteristics. The addition of suppressed side etching and made it possible to fabricate ridge mesa structures for the laser diodes with a height of 4 μm and a width of 1 μm with superior controllability. The effects of addition were investigated by Auger electron spectroscopy and a mechanism suppressing side etching was examined. The characteristics including lifetime of the laser diodes fabricated by the RIE technique were as excellent as those of laser diodes fabricated by wet etching.
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