Abstract
An implantation doping approach is implemented to fabricate Gd-doped HfO2 resistive random access memory (RRAM) devices. The significantly enhanced performances are achieved in the Gd-doped HfO2 RRAM devices including improved uniformity of switching parameters, enlarged ON/OFF ratio, and increased switching speed without obvious reliability degradation. This performance improvement in the Gd-doped HfO2 RRAM devices is clarified to the suppressed randomicity of oxygen vacancy filaments’ formation and the reduced oxygen ion migration barrier induced by trivalent Gd-doping effect. The achieved results also demonstrate the validity of implantation doping approach for the fabrication of RRAM devices.
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