Abstract
GaxIn1−xAsyP1−y/Gax′,In1−x′,Asy′,P1−y′ visible light emission diodes (LED) are reported. The double heterostructures were grown on (100) GaAs substrates by a liquid phase epitaxial (LPE) growth technique from a source melt rich in phosphorus. The wavelength of emitted light was 670–680 nm at room temperature.
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