Abstract
In this paper, one transistor floating body RAM is experimentally investigated on n-channel bulk FinFET transistors. Bipolar junction transistor (BJT) programming mode is used to write and read "1" while the forward biasing of the body-drain junction is used to write "0". It is shown that the floating body effect disappears under pulsed measurements when the transistor body bias is lower than 1 V or contacted to the ground. Furthermore, the bulk FinFET transistor could also operate as 1T-DRAM with both gate and bulk contacts floating, which is similar to the biristor (gateless) behavior.
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