Abstract
We report on gate-bias and temperature dependence of pentacene-based organic thin film transistors (OTFTs) with MoO 3 /Au contacts. In this study, we confirmed to obtain nearly zero activation energy (E A ) without applied gate biases at a temperature between 133 K and 293 K. By increasing gate voltage, the activation energy for pentacene-based OTFT decreases concurrently. The effect of activation energy is attributed to the carrier transport occurred either via charge injection at a source/drain or in the organic materials while transport across grain boundaries/barrier height, due to the Fermi level shifted and/ or changed due to the free carrier concentration.
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