Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Yaozong Zhong,Hui Yang,Shuming Zhang,Yu Zhou,Shuai Su,Xiaoning Zhan,Qian Sun,Xiaolu Guo,Xin Chen,Hongwei Gao

doi:10.1109/jestpe.2020.3014372

Abstract

Gate reliability and its degradation mechanism were studied for the normally off high-electron-mobility transistors (HEMTs) with regrown p-GaN gate and AlN/SiN x stack passivation. Through comparing the forward leakage current in two designed structures, the conduction mechanism is determined to be Fowler-Nordheim tunneling whose current is independent of temperature when the Pd/p-GaN Schottky junction is under high electric field. Even for the regrown p-GaN gates, this Schottky junction fails at first, resulting in an abrupt increase in gate current. The maximum gate operation voltage with a failure rate of 1% for 10-year lifetime is estimated to be about 6.87 and 6.07 V at room temperature by adopting power law and exponential law as extrapolation fitting, respectively. Degradation process monitoring reveals that the net acceptor concentration N A extracted through C- V fitting presents an apparent decreasing trend from 3.8×10 19 to 1.1×10 19 cm -3 with the stress time increased from 30 to 2600 s. This is assumed to be related with the defects generation in the Schottky depletion region under high tunneling current and high electric field. These analyses show the feasibility of the normally off HEMTs with a regrown p-GaN gate and AlN/SiN x stack passivation for practical applications, giving directions for further improving the gate breakdown voltage and lifetime.

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