Abstract
ABSTRACT We studied systematically various Bi-based pyrochlore materials (Bi3NbO7, Bi2Ti2O7, Bi2Mg2/3Nb4/3O7, Bi2Cu2/3Nb4/3O7, and Bi1.5Zn1.0Nb1.5O7) prepared by pulsed-laser deposition at less than 150°C for potential dielectric applications for organic thin film transistor (OTFT). The p-type pentacene OTFT devices were fabricated with 200 nm-thick Bi2Mg2/3Nb4/3O7 (BMN) with a high dielectric constant (∼ 40) as gate dielectrics. The channel width and length of the OTFT devices were 50 and 1000 μ m, respectively. The OTFT operating voltage of 5V could be possible with the low threshold voltage of ∼ 1 V due to high dielectric constant and capacitance values (209 nF/cm2) of BMN thin films. Such a low operating voltage and the mobility as high as ∼ 1.2 cm2/Vs indicate that low-temperature grown Bi-based pyrochlore materials, i.e., BMN, are very promising for gate dielectric applications of OTFT.
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