Gate dielectric scaling in MOSFETs device

Abstract

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a basic type of transistor to be used as a switch since 1959. Since then, the successful of MOSFET is due to good properties between silicon and silicon dioxide. The reduction of silicon oxide thickness provide further enhancement in device performance. At 90 and 65 nm technology nodes, the gate oxide could not be scaled anymore due to the direct tunneling effect resulting significant increase of leakage current. At 45 nm the high-k + metal gate has been introduced. Recently, the ferroelectric effect material is introduced which significantly reduce the gate leakage current. This paper review the evolution of gate dielectric scaling from the era of silicon dioxide to high-k + metal gate and ferroelectric effect material.