Abstract
Appropriate Ge surface control and resulting formation of Ge MIS interfaces with superior interface properties are one of the most critical issues in realizing high performance Ge MISFETs. This paper reviews our recent results on the physical and electrical properties of Ge MIS interfaces fabricated by direct oxidation and nitridation of Ge surfaces, which are expected to form the interface control layers to reduce the density of interface defects and to provide high carrier mobility. The results on gate stacks composing of HfO 2 and the nitrided Ge surfaces are also addressed.
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