Year-end Sale % OFF 
Abstract
We investigate an electrostatically defined quantum point contact (QPC) in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the QPC is extracted from finite-bias measurements. The Zeeman splitting is measured in both in-plane and out-of-plane magnetic fields. We find an in-plane g factor |g∥*|≈40. The out-of-plane g factor is measured to be |g⊥*|≈50, which is close to the g factor in the bulk.Received 7 November 2020Revised 16 February 2021Accepted 11 March 2021DOI:https://doi.org/10.1103/PhysRevResearch.3.023042Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.Published by the American Physical SocietyPhysics Subject Headings (PhySH)Research AreasElectrical conductivityQuantum transportSpin-orbit couplingPhysical SystemsQuantum wellsTwo-dimensional electron systemTechniquesCrystal growthEpitaxyEtchingEvaporationHall barLiquid helium coolingTransport techniquesk dot p methodCondensed Matter & Materials Physics
Highlights
Indium antimonide (InSb) is a III-V binary compound known for its low effective mass, giant effective g factor in the bulk, and its large spin-orbit interactions (SOIs) [1,2,3,4,5]
While carrier mobility is high and the elastic mean free path exceeds the dimensions of the quantum point contact (QPC), time-dependent shifts of the device characteristics lead to serious hysteresis effects when sweeping the gate voltages
As a comparison provided in the Supplementary Material of Ref. [26], a gate-defined QPC in an InSb quantum wells (QWs) was characterized to be inferior in quality
Summary
Indium antimonide (InSb) is a III-V binary compound known for its low effective mass, giant effective g factor in the bulk, and its large spin-orbit interactions (SOIs) [1,2,3,4,5]. We provide a detailed characterization of its energy levels, magnetoelectric subband structure, and effective g factor with the magnetic field applied in different directions relative to the plane of the 2DEG. The same dc bias Vsg is applied to both parts of the split-gate to form the QPC in the 2DEG.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
