Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS2 van der Waals Heterostructures.

Abstract

We have realized encapsulated trilayer MoS2 devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000 cm2/(V s) at a density of 3 × 1012 cm-2 at a temperature of 1.9 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 0.9 T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.