Abstract
Thin-film, silicon-on-insulator (SOI) MOSFETs exhibit bias-dependent suppression of the kink effect. For zero or positive back gate bias, the well known kink effect is suppressed but the threshold voltage depends strongly on back gate bias. For sufficiently negative back gate bias (as might be required for total-dose radiation-hard applications), the kink effect reemerges and the threshold voltage depends instead on the applied drain voltage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.