Gate-controlled spin polarized current in ferromagnetic single electron transistors

Abstract

We theoretically investigate spin dependent transport in ferromagnetic/normal metal/ferromagnetic single electron transistors by applying master equation calculations using a two dimensional space of states involving spin and charge degrees of freedom. When the magnetizations of ferromagnetic leads are in anti-parallel alignment, the spins accumulate in the island and a difference of chemical potentials of the two spins is built up. This shift in chemical potential acts as charge offset in the island and alternates the gate dependence of spin current. Taking advantage of this effect, one can control the polarization of current up to the polarization of lead by tuning gate voltages.