Abstract
HgTe/Hg0.3Cd0.7Te(0 0 1) quantum well structures fabricated with a Si–O–N insulator layer and an Au top gate electrode exhibit hysteresis effects in their gate-voltage dependent carrier density and thus a nonlinear variation of the Rashba spin–orbit splitting energy (ΔR). Charging and discharging of states at the semiconductor insulator interface has been found to be responsible for this effect. The quantitative agreement with a simple capacitor model has been used to identify the maximum hysteresis-free gate-voltage range. A nearly linear variation of ΔR with applied gate voltage has been observed in this range.
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