Abstract
We demonstrate gate control of the carrier distribution in $k$-space in bilayer and monolayer ${\mathrm{MoS}}_{2}$ devices, probed by microphotoluminescence spectroscopy on a contacted single flake. The characteristic emission lines of the neutral and the negatively charged exciton act as a sensor for electron depletion/agglomeration via gate voltage. Gate-induced carrier depletion enhances the sensitivity to defects in monolayers, whereas in bilayers the indirect transition becomes more weight. The specific band structure of bilayers results in a thermal dissociation of trions at 200 K and above, in contrast to monolayers where trion emission is observed up to room temperature. We show that these findings are a consequence of a bias-driven redistribution of charge carriers between the different band minima.
Published Version
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