Abstract
A rapid thermal annealing (RTA) treatment was used to improve the performance of ammonia sensors based on a MOSFET structure with a thin SnO 2 layer used as a gate. RTA processes in vacuum with duration of 15–60 s and temperatures 600–800°C were applied. After thermal treatment samples are subjected to a cycle of successive steps with different environmental conditions in order to reveal the sensitivity, selectivity and reversibility of the response. It is found that the RTA process at 800°C, with duration of 60 s, rise time of 2 s and fall time of 4 s results in enhanced sensitivity to the active agent (NH 3), reduced cross-sensitivity to water vapours (relative humidity) and improved reversibility of the device's response. This overall improvement of the performance is explained by surface changes of the SnO 2 layer, provoked by the RTA process. Such changes are revealed by reflection high-energy electron diffraction (RHEED) and scanning electron microscopy (SEM).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
