Abstract
Thin nanofilms have been grown on the surface of single-crystal InP wafers using PbO + V2O5 mixtures in the gas phase. The oxide mixtures used as chemical stimulators have been shown to accelerate the thermal oxidation of InP. The resultant films exhibit gas-sensing properties for ammonia (concentration of 140 ppm) and carbon monoxide (95 ppm). The highest gas sensitivity is near 1.2 arb. units, at temperatures in the range 200–240°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
