Abstract
A GaSb/PbSe/GaSb double heterojunction laser structure is proposed. The advantages and feasibility of fabricating such lasers are discussed. Theoretical calculations show that the threshold gain for GaSb/PbSe lasers is much smaller than for traditional PbEuSe/PbSe lasers. Electrical confinement and heat dissipation is also significantly improved. The resulting much lower threshold currents and temperature difference between the active layer and heat sink should allow GaSb/PbSe lasers to operate in continuous wave mode above room temperature.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
