Abstract
A GaSb/PbSe/GaSb double heterojunction laser structure is proposed. The advantages and feasibility of fabricating such lasers are discussed. Theoretical calculations show that the threshold gain for GaSb/PbSe lasers is much smaller than for traditional PbEuSe/PbSe lasers. Electrical confinement and heat dissipation is also significantly improved. The resulting much lower threshold currents and temperature difference between the active layer and heat sink should allow GaSb/PbSe lasers to operate in continuous wave mode above room temperature.
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