1.55-μm range InAs/InP (100) quantum dot telecom devices

Abstract

Lasing and sharp line emission in the 1.55-μm wavelength region is demonstrated from ensembles and single InAs quantum dots (QDs) embedded in InGaAsP on InP (100) by metalorganic vapor phase epitaxy (MOVPE). Wavelength tuning of the QDs is achieved through the insertion of ultra-thin (1-2 monolayers) GaAs interlayers underneath the InAs QDs. To increase the active volume widely-stacked QD layers are identically reproduced. Closely-stacked QDs reveal unpolarized emission from the cleaved side due to vertical electronic coupling which is important for polarization insensitive semiconductor optical amplifiers. Fabry-Perot narrow ridge-waveguide lasers implementing five layers of widely-stacked QDs as gain medium operate in continuous wave mode at room temperature with low threshold current, low transparency current density of 6 A/cm² per QD layer, and low loss of 4.2 cm^-1, which are accompanied by a 80 nm wide gain spectrum. Device performance does not suffer from sidewall recombination in deeply-etched QD lasers which possess similar threshold currents as shallowly-etched ones and do not deteriorate with time. This allows the fabrication of mono-mode and compact devices with small bending radii, as demonstrated by the operation of a QD ring laser with 40-GHz free spectral range. Micro-PL of single QDs exhibits sharp exciton-biexciton emission around 1.55 μm persisting to temperatures above 70 K; the prerequisite for single photon sources working at liquid nitrogen temperature for fiber-based quantum information and cryptography systems.