GaSb‐based heterostructure with buried vacuum pocket photonic crystal layer

Abstract

The vacuum pocket retaining molecular beam epitaxial regrowth of the nano-patterned GaSb surface was demonstrated. The high contrast 2D photonic crystal layer was incorporated into the test 2 µm emitting laser heterostructure. The photonic dispersion determined from angle-resolved electroluminescence experiment showed four well-resolved bands corresponding to the model predictions for the square lattice. The single-mode lasing near 2 µm has been observed at the temperature corresponding to the alignment of the photonic crystal band-edge states and the quantum well gain peak. The reference devices without the photonic crystal layer emitted trivial spectra and did not lase at any temperature.