Abstract
We report on GaSb-based 2.Xμm diode lasers with an improved waveguide design, leading to a reduced beam divergence in the fast axis of 44° full width at half maximum (FWHM), compared to 67° FWHM of a conventional broadened waveguide design. 2.3μm ridge-waveguide lasers with the improved epitaxial design showed, besides the narrow beam profile in the fast axis, an excellent slow axis beam quality [M2<1.1 up to 70mW, continuous wave (cw)]. 2.0μm broad-area lasers with the improved waveguide too, exhibit a maximum cw-output power of 1.96W.
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