Abstract
The use of gas source molecular beam epitaxy, using hydrogen selenide and elemental Zn as source materials, has resulted in the growth of high quality ZnSe on closely lattice-matched GaAs and (In,Ga)P. The undoped ZnSe epilayers are comparable in quality to material grown by molecular beam epitaxy, as indicated by narrow double-crystal x-ray diffraction rocking curves and intense photoluminescence dominated by a single donor-bound near-bandedge excitonic feature. Nitrogen species, derived from a radio frequency plasma source, are successfully used as acceptor impurities for ZnSe; photoluminescence spectra confirm the incorporation of nitrogen by the presence of the expected donor-to-acceptor pair recombination. Atomic concentrations of nitrogen as high as 5 x 1018 cm-3, are measured by secondary ion mass spectroscopy. Thus far, capacitance-voltage measurements indicate net acceptor concentrations (NA -ND) of approximately 1017 cm-3.
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