Abstract
Studies are reported of arsenic doped CdTe layers grown by molecular beam epitaxy using arsine (AsH 3). Excess Cd flux was used to obtain planer growth surfaces. The crystallinity of CdTe buffer layers grown at 300°C was improved by adding an excess Cd flux, where the Cd/Te flux ratio was 1.8. CdTe surfaces exhibiting streaky reflection high energy electron diffraction patterns were obtained for a Cd/Te flux ratio range from 1.06 to 1.12 for 170°C growth. Dimer arsenic (As 2) was generated from the pyrolysis of arsine at 1200°C and used to grow As-doped CdTe layers with a resulting arsenic concentration of 3 × 10 17 cm −3. Photoluminescence spectra show evidence of arsenic incorporation on the tellurium sublattice. Secondary ion mass spectroscopy measurements showed that the As incorporation efficiency using arsine was 10 times higher than that using arsenic alone. These results show that arsine is a better source than solid arsenic for high-efficiency arsenic doping.
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