Abstract
Comparative gas detection measurements have been performed on thin-film ( d∼50–300 nm) and thick-film ( d∼15–80 μm) SnO 2 devices. We find that at normal sensor operation temperatures of the order of 400°C thin-film devices mainly respond to oxidising gases such as O 3 and NO 2, whereas thick-film ones preferably respond to reducing species like CO and CH 4. A significant response towards oxidising species, however, was observed upon reducing the operation temperature of the thick-film devices to about 100°C. We explain these effects in terms of a simple diffusion-reaction model taking into account the different architectures of thin- and thick-film gas sensing devices.
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