Abstract
Results are presented on the assessment, using a variety of techniques, of methyl, tertiary-butyl telluride as a potential precursor for the growth of CdTe, HgTe and (Hg,Cd)Te by metal-organic vapour-phase epitaxy (MOVPE). It is concluded that, despite its low decomposition temperature and the successful growth of HgTe, MeTeBu t is a very poor tellurium precursor. It is probable that all unsymmetrical tellurium alkyls containing a methyl group will also be poor tellurium precursors. Crown Copyright
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