Abstract
A packaged environment was fabricated by bonding substrates with the Au/Pt/Ti layers. By annealing at 450°C, Ti diffused through the Pt and Au layers and reacted with residual gas molecule at the inner surface of the package. These results suggested that a cap wafer metalized the Au/Pt/Ti layer can form hermetic sealing with a device substrate and subsequently absorb the residual gas in the package by the activation annealing. It is believed this would contribute to simplified vacuum packaging processes in which getter materials is not necessary.
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