Gap transit-time effects in fast optoelectronic semiconductor switching devices

Abstract

The output shape of an electric pulse, which traverses the gap of a fast optoelectronic semiconductor switching device, is influenced by the transit time of the pulse. This dependence as well as the use of transit-time effects for pulse shortening are studied. To this end in the present paper optical and electrical time-dependent properties of the central unit, I.e. the laser-excited semiconductor, and the external passive electric elements and sources are considered and a time-variant telegraphic equation obeying appropriate boundary conditions is established. Numerical solutions for physically important cases are calculated and discussed.