Abstract
A new optoelectronic microwave switching device is described. The device is composed of a Semiconductor junction diode that is incorporated into a transmission line and illuminated with optical pulses from a semiconductor laser. Switching of microwave signals is achieved by changes in the RF impedance of the diode's high-field region resulting from an optically induced switching between low and high-level avalanche states. Experimental results demonstrating the switching characteristics and speed of this device are presented along with a basic theory of operation. The ultimate capabilities of this device and its advantages over conventional p-i-n diode switches and other optoelectronic switching devices are also discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
