Abstract
A mass spectroscopic study was carried out on atomic hydrogen ( H•) cleaning of GaAs substrates. During the H•-induced removal of surface Ga oxides at 410° C, a desorption of GaOH was observed along with a weak desorption of Ga2O. Upon interrupting the H• generation, the GaOH desorption stopped immediately, whereas the Ga2O desorption continued, indicating that the surface GaOH has a short lifetime. Considering the fact that bulk GaOH is unstable and has not yet been isolated, it is noteworthy that GaOH is a major desorption product of the reaction between H• and Ga oxides.
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