Abstract
InGaN/GaN multiple-quantum well(MQW) light-emitting diodes(LEDs) were fabricated,in which a SiO2 current blocking layer(CBL) was inserted underneath the p-pad electrode.Samples were divided into three groups: normal surface,surface roughing,and surface roughing plus side wall etching.Each group had two different structure devices: with and without CBL.In each group,the voltage Vf at 20 mA for the LEDs with a CBL(Vf=3.156,3.282,3.284 V) were slightly higher than those of without CBL(Vf=3.105,3.205,3.210 V).However,the luminous efficiency and the light-output power of the LEDs with CBL were better than those without CBL.At 20 mA current,the output power of the LEDs with a CBL increase 10.20%,12.19%,11.49% compared with those without CBL.It is due to the current spreading effect in CBL devices.The CBL can also reduce parasitic optical absorption in the p-pad electrode.
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