Abstract
According to Monte-Carlo ray tracing method,this paper simulated the GaN-based flip-chip LED light extraction efficiency(LEE),compared the differences between the status of sapphire with substrate and without it,with one side roughening and double sides roughening,with and without buffer layer,and made further selection and optimization about the structure and the size of surface roughing unit.The results showed that both the thicker substrate and introduction of AlN buffer layer were favorable for the increase of LEE,the LEE for the chip with double surfaces roughened sapphire substrate was significantly better than the one with single surface roughened sapphire substrate,the structure and size of the surface roughing unit have great influences on the LEE,the LEE was relatively higher when the size of micro roughened structure was comparable to its one-to-one distance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
