Abstract
GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (R DS(on) ) values. Thus, dynamic R DS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement reaults, a behavioural model is proposed to represent device dynamic R DS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of R DS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that R DS(on) values of this device would increase due to trapping effects.
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