Modeling of low-frequency noise in metal-oxide-semiconductor field-effect transistor with electron trapping-detrapping at oxide-silicon interface

Abstract

A low-frequency (flicker) noise model based on the physics of trapping and detrapping of electrons at the silicon-oxide interface for MOS transistors in the linear regions is presented. Using the experimental results that the trapping and detrapping time constants are different for the same gate bias and temperature, both (V/sub G/-V/sub t/)/C/sub ox/ and C/sub ox//sup -2/ dependencies were obtained in the newly proposed model without introducing the mobility fluctuation term. Gate and temperature dependencies of the frequency index were also incorporated into the model. Results show that the proposed model yields a better correlation to the experiments than others, but there are still several experimental observations unexplained. Suggestions for further refinement of the model are also given.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>