GaN‐based UV/blue electroluminescent devices deposited on Si at low temperature

Abstract

GaN layers were grown on (111)Si substrates at 450 °C by compound source molecular beam epitaxy (CS-MBE). Streaky reflection high-energy electron diffraction (RHEED) patterns of the GaN layers were observed after the growth. The results indicate the growth of a hexagonal GaN crystal on a Si substrate and the effectiveness of CS-MBE in the fabrication of GaN layers at low temperature. GaN-based electroluminescent devices (ELDs) using CS-MBE were fabricated on the Si substrates. Purplish blue emission was observed from the ELDs under the AC operation. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)