Abstract
LED micro-displays offer diverse applications with their superior characteristics and unique performance, particularly in high light utilization efficiency (LUE), design simplicity, long lifetime, and excellent visibility under bright day-light. In this work, we designed and fabricated GaN-based light emitting diode on silicon (LEDoS) micro-displays by integrating monolithic LED micro-arrays and active matrix substrates using flip-chip technology. The LEDoS micro-displays have been developed in generations with increasing display resolutions and scaled pixel pitches. Representative display images have been demonstrated and show great potential in wearable electronic and photonic applications.
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