GaNAs/GaInAs short-period superlattice quantum well structures grown by MOCVD using TBAs and DMHy

Abstract

The MOCVD growth of GaInNAs/GaAs quantum wells (QWs) using TBAs and DMHy was studied for realizing long wavelength lasers. In this study, we propose a short-period superlattice using GaNAs and GaInAs to achieve high nitrogen (N) incorporation. This may solve one of the problems on the limitation of N incorporation in GaInNAs compared with a GaNAs. By comparing the peak wavelength of a photoluminescence with a sample without the DMHy flow, we observed a 20 nm red shift of the emission wavelength from a GaNAs/GaInAs QW sample. The N composition in the GaNAs layer was 0.004 and the required DMHy flow was less than 1/10 compared with that of a GaInNAs QW. An intermediate layer inserted QW structure was also grown using the technique enabling a large N incorporation in GaNAs.