Abstract
Long-wavelength (≳1.1 μm) optical emission has been achieved in pseudomorphic InGaAs-on-GaAs quantum-well structure by replacing InGaAs random alloy quantum well with (InAs)n/(GaAs)n short period superlattice (SPS). With the same quantum-well width, the photoluminescence peak energy of the SPS structure is always smaller than that of the In0.5Ga0.5As random-alloy structure. Strong photoluminescence was observed in (InAs)1/(GaAs)1 SPS quantum wells with thickness up to 84 Å. The longest optical-emission wavelength observed in (InAs)1/(GaAs)1 SPS quantum-well structures at room temperature was 1.34 μm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
