Abstract
AbstractWe report on n‐p junctions formed on p/p+ GaN layers by silicon ion‐implantation. Post‐implantation damage removal was performed by annealing at 1260 °C in N2/NH3 ambient. Rectifying behaviour observed in current‐voltage measurements was associated with the n‐p junctions formed by ion‐implantation. In circular devices with a vertical n‐p junction topology, light emission under forward bias conditions was observed as a ring near the periphery of the n‐contact region, confirming the existence of an electrically active n‐p junction. The electrical‐characteristics of the n‐p diodes does not seem to be limited by the quality of the implanted junction but rather by the high spreading resistance of the underlying p+ contact layer, for which activation was incomplete. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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