Abstract
We report the simulated visible range characteristics of gold (Au)/graphene-GaAs Schottky junctions in MESFET (Metal–Semiconductor Field Effect Transistor) under photovoltaic, forward bias, and reverse bias conditions. The devices exhibit high photoresponse in zero bias conditions, moderate response under applied reverse bias, and zero photoresponse in forward bias conditions. We discuss in detail the factors involved in the attained response and provide comparative analysis of the studied devices with our previously published work on ultraviolet (UV) characterization demonstrating moderate response under both zero bias and reverse bias, and z ero response under forward bias. We also perform comparison of our theoretical results with the literature showing enhanced or comparable performance. The simulation model is validated with the experimental results reported elsewhere as well as with the commercially available software (Visual TCAD) simulations. The GaAs MESFET Schottky junctions will serve good purpose in UV-visible applications.
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