Abstract
A GaN ultraviolet photodetector with a petal-like β-Ga2O3 microcrystalline layer was prepared on the GaN template using electrochemical anodizing and annealing processes. The petal-like β-Ga2O3 microcrystalline layer was found to enhance the absorption of ultraviolet light and suppress the dark current, and a high responsivity from 230 nm (responsivity 8.5 A/W) to 400 nm (responsivity 0.1 A/W) was achieved by the photodetector. The rejection ratio of ultraviolet–visible light is greater than three orders of magnitude representing a high selectivity of ultraviolet light detection. The responsivity slopes of the photodetector under different biases were found to be strongly correlated with the wavelength of light, and the responsivity is much higher than that of conventional metal/insulator/metal wavelength identification photodetectors. This effective method of synthesizing β-Ga2O3 crystallites on GaN can be used to enhance the ultraviolet absorption of GaN photodetectors and improve the detection performance.
Highlights
Ultraviolet (UV) photodetectors are widely used in UV phototherapy, bio-aerosol detection, flame detection, nondestructive forensic examination, and astronomical imaging.1–4 Recently, GaN-based UV photodetectors have attracted great interest due to the unique properties of the material, such as good radiation hardness and excellent chemical and thermal stability, all of which are suitable for harsh working environments
Due to the low conduction band shift between β-Ga2O3 and GaN, photon-generated electrons in GaN can be collected by the positive bias contact of β-Ga2O3.4,13 Compared to the smooth GaN surface, which is highly reflective,14 porous GaN can effectively enhance UV absorption, improving the performance of GaN photodetectors.7,10,15 β-Ga2O3 is eminently suitable for GaN MIS photodetectors due to its large bandgap (4.9 eV) and excellent thermal and chemical stability, which guarantee its application in harsh environments
A GaN ultraviolet photodetector with a petal-like β-Ga2O3 microcrystalline layer was prepared on the GaN template using EC anodizing and annealing processes
Summary
Ultraviolet (UV) photodetectors are widely used in UV phototherapy, bio-aerosol detection, flame detection, nondestructive forensic examination, and astronomical imaging. Recently, GaN-based UV photodetectors have attracted great interest due to the unique properties of the material, such as good radiation hardness and excellent chemical and thermal stability, all of which are suitable for harsh working environments. GaN-based UV photodetectors have attracted great interest due to the unique properties of the material, such as good radiation hardness and excellent chemical and thermal stability, all of which are suitable for harsh working environments. Due to the low conduction band shift between β-Ga2O3 and GaN, photon-generated electrons in GaN can be collected by the positive bias contact of β-Ga2O3.4,13 Compared to the smooth GaN surface, which is highly reflective, porous GaN can effectively enhance UV absorption, improving the performance of GaN photodetectors. β-Ga2O3 is eminently suitable for GaN MIS photodetectors due to its large bandgap (4.9 eV) and excellent thermal and chemical stability, which guarantee its application in harsh environments.. By preparing a petal-like β-Ga2O3 microcrystalline layer on the GaN film, the UV absorption of GaN will be greatly improved. The performance of a GaN UV photodetector with a petal-like β-Ga2O3 microcrystalline layer has not been reported previously
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