Abstract
In this study, we investigate the impact of two-dimensional MoS2 coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS2 coating, yielding luminescence intensity comparable to that from a QW capped by an AlGaN barrier. Our results demonstrate that MoS2, despite its quite different nature from III-nitride semiconductors, acts as an effective barrier for surface GaN QWs and suppresses spatially localized intrinsic surface states. This finding provides novel pathways for efficient III-nitride surface passivation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
