Abstract
Molecular-beam-epitaxy growth of Eu-doped GaN quantum dots embedded in AlN has been achieved. The crucial issue of Eu location has been addressed by extended x-ray absorption fine structure measurements. By comparing the signature of the Eu short-range environment for several samples, it is concluded that Eu is mostly incorporated in GaN dots. Intense cathodoluminescence associated with Eu has been measured, with no GaN bandedge emission, evidence that carrier recombination mostly occurs through rare-earth ion excitation. Persistent photoluminescence of Eu-doped GaN quantum dots as a function of the temperature is suggested to be further confirmation of the recombination of confined carriers through Eu ion excitation.
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